Growth of GaN single crystals by Ca(3)N(2) flux
文献类型：期刊论文
| 作者 | G. Wang ; W. X. Yuan ; J. K. Jian ; H. Q. Bao ; J. F. Wang ; X. L. Chen ; J. K. Liang |
| 刊名 | Scripta Materialia
 |
| 出版日期 | 2008 |
| 卷号 | 58期号:4页码:319-322 |
| 关键词 | CALPHAD single crystal growth nitride vapor-phase epitaxy iii-v nitrides bulk gan thermodynamic assessment na flux pressure gallium system mechanism devices |
| ISSN号 | 1359-6462 |
| 中文摘要 | This paper reports recent progress on GaN single crystal growth by Ca(3)N(2) flux. The isothermal phase diagrams of the Ca-Ga-N system were predicted from the corresponding binary systems by CALPHAD. Well-crystallized GaN crystals up to 1.5 mm were grown from the Ca-Ga-N system at 900 degrees C under 0.2 MPa N(2) pressure. It was found that the crystal size depended on the molar ratio of starting materials, the temperature and the duration of growth. A growth mechanism involving two-step reactions is proposed. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/33125]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | G. Wang,W. X. Yuan,J. K. Jian,et al. Growth of GaN single crystals by Ca(3)N(2) flux[J]. Scripta Materialia,2008,58(4):319-322. |
| APA | G. Wang.,W. X. Yuan.,J. K. Jian.,H. Q. Bao.,J. F. Wang.,...&J. K. Liang.(2008).Growth of GaN single crystals by Ca(3)N(2) flux.Scripta Materialia,58(4),319-322. |
| MLA | G. Wang,et al."Growth of GaN single crystals by Ca(3)N(2) flux".Scripta Materialia 58.4(2008):319-322. |
入库方式： OAI收割
来源：金属研究所
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