Stark effect of electrons in semiconducting rectangular quantum boxes
文献类型：期刊论文
| 作者 | G. Z. Wei ; S. Wang ; G. Y. Yi |
| 刊名 | Microelectronics Journal
 |
| 出版日期 | 2008 |
| 卷号 | 39期号:5页码:786-791 |
| 关键词 | quantum boxes Stark effect optical-absorption exciton energies field well wires |
| ISSN号 | 0026-2692 |
| 中文摘要 | The Stark shift of the electronic energy levels in semiconducting rectangular quantum boxes with different sizes is investigated by the use of variational solutions to the effective-mass approximation for electric fields of various orientations with respect to the center axis of the box. The asymptotic expansions of the Stark shift are given in the limits of low and high fields, respectively; they clearly indicate that the Stark shift is a quadratic function of the electric field for low electric fields and is an approximate linear function of the electric field for high electric fields. Likewise, our results also show that the largest Stark shift is obtained for the field directed along the diagonal in a cubic box, and is found for the low field directed along a side of the box and for the high field along the diagonal in a rectangular one. The large Stark shift of the electron and hole trapped in a quantum box leads to an obvious reduction of the interband recombination. (C) 2008 Elsevier Ltd. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/33181]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | G. Z. Wei,S. Wang,G. Y. Yi. Stark effect of electrons in semiconducting rectangular quantum boxes[J]. Microelectronics Journal,2008,39(5):786-791. |
| APA | G. Z. Wei,S. Wang,&G. Y. Yi.(2008).Stark effect of electrons in semiconducting rectangular quantum boxes.Microelectronics Journal,39(5),786-791. |
| MLA | G. Z. Wei,et al."Stark effect of electrons in semiconducting rectangular quantum boxes".Microelectronics Journal 39.5(2008):786-791. |
入库方式： OAI收割
来源：金属研究所
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