Atomic structure and deformation behaviour around the crack tip induced during indentation of GaAs single crystal
文献类型：期刊论文
| 作者 | Y. B. Xu ; Z. C. Li ; H. Zhang |
| 刊名 | Philosophical Magazine Letters
 |
| 出版日期 | 2008 |
| 卷号 | 88期号:1页码:19-26 |
| 关键词 | electron-microscopy dislocation emission brittle-fracture silicon-crystals carbide ductile hvem view |
| ISSN号 | 0950-0839 |
| 中文摘要 | In a previous paper, we reported an investigation of the microstructure ahead of the crack tip induced during indentation at room temperature or GaAs single crystal and found that the crack tip is not atomically sharp. Dislocations may be activated around the crack tip under stress and these lead to a transformation from a crystalline lattice to a disordered structure, forming an amorphous hand between crack walls. It is proposed that the crack propagation is a result of decohesion by the amorphous hand, rather than sequential rupture of cohesive bonds. Here we present an HREM investigation of the atomic structure at the crack tip, including fast Fourier transformations (FFTs) and inverse fast Fourier transformations (IFFTs) performed on selected areas near the crack tip. The observations and analysis further confirm that the crack tip is not atomically sharp, and that the deformation is anisotropic along different crystalline planes. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://210.72.142.130/handle/321006/33252]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Y. B. Xu,Z. C. Li,H. Zhang. Atomic structure and deformation behaviour around the crack tip induced during indentation of GaAs single crystal[J]. Philosophical Magazine Letters,2008,88(1):19-26. |
| APA | Y. B. Xu,Z. C. Li,&H. Zhang.(2008).Atomic structure and deformation behaviour around the crack tip induced during indentation of GaAs single crystal.Philosophical Magazine Letters,88(1),19-26. |
| MLA | Y. B. Xu,et al."Atomic structure and deformation behaviour around the crack tip induced during indentation of GaAs single crystal".Philosophical Magazine Letters 88.1(2008):19-26. |
入库方式： OAI收割
来源：金属研究所
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