中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
First-principles study of transport of V doped boron nitride nanotube

文献类型:期刊论文

作者K. L. Yao ; Y. Min ; Z. L. Liu ; H. G. Cheng ; S. C. Zhu ; G. Y. Gao
刊名Physics Letters A
出版日期2008
卷号372期号:34页码:5609-5613
关键词first-principles one-dimensional tunnel magnetoresistance spin filter large magnetoresistance ferromagnetic-films sic nanowires bn nanotubes systems conductance junctions
ISSN号0375-9601
中文摘要We perform first-principles calculations of spin-dependent quantum transport in V doped boron nitride nanotube: the junction of pristine (6, 0) boron nitride nanotube in contact with V doped (6, 0) boron nitride nanotube electrodes. Large tunnel magnetoresistance and perfect spin filtration effect are obtained. The zero bias tunnel magnetoresistance is found to be several thousand percent, it reduces monotonically to zero with a voltage scale of about 0.65 V, and eventually goes to negative values after the bias of 0.65 V. The ratio of spin injection is above 95% till the bias of 0.85 V and is even as large as 99% for the bias from 0.25 eV to 0.55 eV when the magnetic configurations of two electrodes are parallel. The understanding of the spin-dependent nonequilibrium transport is presented by investigating microscopic details of the transmission coefficients. (C) 2008 Elsevier B.V. All rights reserved.
原文出处://WOS:000258748200020
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/33287]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
K. L. Yao,Y. Min,Z. L. Liu,et al. First-principles study of transport of V doped boron nitride nanotube[J]. Physics Letters A,2008,372(34):5609-5613.
APA K. L. Yao,Y. Min,Z. L. Liu,H. G. Cheng,S. C. Zhu,&G. Y. Gao.(2008).First-principles study of transport of V doped boron nitride nanotube.Physics Letters A,372(34),5609-5613.
MLA K. L. Yao,et al."First-principles study of transport of V doped boron nitride nanotube".Physics Letters A 372.34(2008):5609-5613.

入库方式: OAI收割

来源:金属研究所

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