中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Reverse polarity effect from effective charge disparity during electromigration in eutectic Sn-Zn solder interconnect

文献类型:期刊论文

作者X. F. Zhang ; J. D. Guo ; J. K. Shang
刊名Journal of Materials Research
出版日期2008
卷号23期号:12页码:3370-3378
关键词ni-p/au layer interfacial reactions cu indium films tin
ISSN号0884-2914
中文摘要Polarity effect on the interfacial reactions from high-density electric currents was investigated in a solder interconnect with a large disparity in the effective charge between the solder constituents. A reverse polarity effect was found where the intermetallic compound layer at the cathode grew significantly thicker than that at the anode under electric loading. Such an abnormal polarity effect was shown to result from electromigrations of Sn and Zn along opposite directions as dictated by the disparity in their effective charges. As Sn migrated to the anode under electron wind force, the resulting back stress drove Zn atoms to drift to the cathode. A kinetic analysis of the Zn mass transport explained the differential growth of the intermetallic compounds at the two electrodes, in good agreement with the experimental data.
原文出处://WOS:000261432200033
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/33346]  
专题金属研究所_中国科学院金属研究所
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X. F. Zhang,J. D. Guo,J. K. Shang. Reverse polarity effect from effective charge disparity during electromigration in eutectic Sn-Zn solder interconnect[J]. Journal of Materials Research,2008,23(12):3370-3378.
APA X. F. Zhang,J. D. Guo,&J. K. Shang.(2008).Reverse polarity effect from effective charge disparity during electromigration in eutectic Sn-Zn solder interconnect.Journal of Materials Research,23(12),3370-3378.
MLA X. F. Zhang,et al."Reverse polarity effect from effective charge disparity during electromigration in eutectic Sn-Zn solder interconnect".Journal of Materials Research 23.12(2008):3370-3378.

入库方式: OAI收割

来源:金属研究所

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