中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Current-voltage characteristics with several threshold currents in insulating low-doped La1-xSrxMnO3 (x=0.10) thin films

文献类型:期刊论文

作者K. Zhao ; J. F. Feng ; M. He ; H. B. Lu ; K. J. Jin ; Y. L. Zhou ; G. Z. Yang
刊名Journal of Rare Earths
出版日期2008
卷号26期号:4页码:567-570
关键词current-induced resistive effect manganites voltage-current characteristic rare earths giant magnetoresistance metal transition behavior electroresistance transport
ISSN号1002-0721
中文摘要The current-induced resistive switching behavior in the micron-scale pillars of low-doped La0.9Sr0.1MnO3 thin films using laser molecular-beam epitaxy was reported. It was demonstrated that the current-voltage curves at 120 K showed hysteresis with several threshold currents corresponding to the switching in resistance to metastable low resistance states, and finally, four closed loops were formed. A mode was proposed, which was based on the low-temperature canted antiferromagnetism ordering for a lightly doped insulating regime.
原文出处://WOS:000259591900020
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/33362]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
K. Zhao,J. F. Feng,M. He,et al. Current-voltage characteristics with several threshold currents in insulating low-doped La1-xSrxMnO3 (x=0.10) thin films[J]. Journal of Rare Earths,2008,26(4):567-570.
APA K. Zhao.,J. F. Feng.,M. He.,H. B. Lu.,K. J. Jin.,...&G. Z. Yang.(2008).Current-voltage characteristics with several threshold currents in insulating low-doped La1-xSrxMnO3 (x=0.10) thin films.Journal of Rare Earths,26(4),567-570.
MLA K. Zhao,et al."Current-voltage characteristics with several threshold currents in insulating low-doped La1-xSrxMnO3 (x=0.10) thin films".Journal of Rare Earths 26.4(2008):567-570.

入库方式: OAI收割

来源:金属研究所

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