Inhibition of interfacial embrittlement at SnBi/Cu single crystal by electrodeposited Ag film
文献类型:期刊论文
作者 | Q. S. Zhu ; Z. F. Zhang ; Z. G. Wang ; J. K. Shang |
刊名 | Journal of Materials Research
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出版日期 | 2008 |
卷号 | 23期号:1页码:78-82 |
关键词 | copper grain-boundaries solder joints bismuth segregation cu interconnect growth |
ISSN号 | 0884-2914 |
中文摘要 | Electrodeposited Ag film was explored as a potential interfacial barrier to Bi segregation for suppressing the interfacial embrittlement of Cu/SnBi interconnects. The presence of Ag film introduced Ag3Sn intermetallic layer at the interface, which effectively prevented Bi from reaching the Cu/intermetallic interface. When the persistent slip bands (PSBs) in the Cu single crystal were driven to impinge the Cu/Cu3Sn interface, interfacial cracking was averted and instead superceded by cracking of intermetallic compounds (IMCs) at the interface. |
原文出处 | |
公开日期 | 2012-04-13 |
源URL | [http://210.72.142.130/handle/321006/33410] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | Q. S. Zhu,Z. F. Zhang,Z. G. Wang,et al. Inhibition of interfacial embrittlement at SnBi/Cu single crystal by electrodeposited Ag film[J]. Journal of Materials Research,2008,23(1):78-82. |
APA | Q. S. Zhu,Z. F. Zhang,Z. G. Wang,&J. K. Shang.(2008).Inhibition of interfacial embrittlement at SnBi/Cu single crystal by electrodeposited Ag film.Journal of Materials Research,23(1),78-82. |
MLA | Q. S. Zhu,et al."Inhibition of interfacial embrittlement at SnBi/Cu single crystal by electrodeposited Ag film".Journal of Materials Research 23.1(2008):78-82. |
入库方式: OAI收割
来源:金属研究所
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