中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Inhibition of interfacial embrittlement at SnBi/Cu single crystal by electrodeposited Ag film

文献类型:期刊论文

作者Q. S. Zhu ; Z. F. Zhang ; Z. G. Wang ; J. K. Shang
刊名Journal of Materials Research
出版日期2008
卷号23期号:1页码:78-82
关键词copper grain-boundaries solder joints bismuth segregation cu interconnect growth
ISSN号0884-2914
中文摘要Electrodeposited Ag film was explored as a potential interfacial barrier to Bi segregation for suppressing the interfacial embrittlement of Cu/SnBi interconnects. The presence of Ag film introduced Ag3Sn intermetallic layer at the interface, which effectively prevented Bi from reaching the Cu/intermetallic interface. When the persistent slip bands (PSBs) in the Cu single crystal were driven to impinge the Cu/Cu3Sn interface, interfacial cracking was averted and instead superceded by cracking of intermetallic compounds (IMCs) at the interface.
原文出处://WOS:000252291200011
公开日期2012-04-13
源URL[http://210.72.142.130/handle/321006/33410]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Q. S. Zhu,Z. F. Zhang,Z. G. Wang,et al. Inhibition of interfacial embrittlement at SnBi/Cu single crystal by electrodeposited Ag film[J]. Journal of Materials Research,2008,23(1):78-82.
APA Q. S. Zhu,Z. F. Zhang,Z. G. Wang,&J. K. Shang.(2008).Inhibition of interfacial embrittlement at SnBi/Cu single crystal by electrodeposited Ag film.Journal of Materials Research,23(1),78-82.
MLA Q. S. Zhu,et al."Inhibition of interfacial embrittlement at SnBi/Cu single crystal by electrodeposited Ag film".Journal of Materials Research 23.1(2008):78-82.

入库方式: OAI收割

来源:金属研究所

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