Electrical resistivity of ultrafine-grained copper with nanoscale growth twins
文献类型：期刊论文
| 作者 | X. H. Chen ; L. Lu ; K. Lu |
| 刊名 | Journal of Applied Physics
 |
| 出版日期 | 2007 |
| 卷号 | 102期号:8 |
| 关键词 | nanocrystalline cu pure copper thin-films tensile properties temperature conductivity boundaries strength alloys nickel |
| ISSN号 | 0021-8979 |
| 中文摘要 | We have investigated electrical resistivities of high-purity ultrafine-grained Cu containing different concentrations of nanoscale growth twins, but having identical grain size. The samples were synthesized by pulsed electrodeposition, wherein the density of twins was varied systematically by adjusting the processing parameters. The electrical resistivity of the Cu specimen with a twin spacing of 15 nm at room temperature (RT) is 1.75 mu Omega cm (the conductivity is about 97% IACS), which is comparable to that of coarse-grained (CG) pure Cu specimen. A reduction in twin density for the same grain size (with twin lamellar spacings of 35 and 90 nm, respectively) results in an increment in electrical resistivity from 1.75 to 2.12 mu Omega cm. However, the temperature coefficient of resistivity at RT for these Cu specimens is insensitive to the twin spacing and shows a consistent value of similar to 3.78x10(-3)/K, which is slightly smaller than that of CG Cu (3.98x10(-3)/K). The increased electrical resistivities of the Cu samples were ascribed dominantly to the intrinsic grain boundary (GB) scattering, while the GB defects and GB energy would decrease with increasing twin density. Transmission electron microscope observations revealed the GB configuration difference from the Cu samples with various twin densities. Plastic deformation would induce an apparent increase in the resistivity. The higher of the twin density, the higher increment of RT resistivity was detected in the Cu specimens subjected to 40% rolling strain. Both the deviated twin boundaries and strained GBs may give rise to an increase in the resistivity. (C) 2007 American Institute of Physics. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/33461]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | X. H. Chen,L. Lu,K. Lu. Electrical resistivity of ultrafine-grained copper with nanoscale growth twins[J]. Journal of Applied Physics,2007,102(8). |
| APA | X. H. Chen,L. Lu,&K. Lu.(2007).Electrical resistivity of ultrafine-grained copper with nanoscale growth twins.Journal of Applied Physics,102(8). |
| MLA | X. H. Chen,et al."Electrical resistivity of ultrafine-grained copper with nanoscale growth twins".Journal of Applied Physics 102.8(2007). |
入库方式： OAI收割
来源：金属研究所
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