Current-induced phase partitioning in eutectic indium-tin pb-free solder interconnect
文献类型：期刊论文
| 作者 | J. P. Daghfal ; J. K. Shang |
| 刊名 | Journal of Electronic Materials
 |
| 出版日期 | 2007 |
| 卷号 | 36期号:10页码:1372-1377 |
| 关键词 | in-Sn solder electromigration current stressing hillocks interface mechanical-properties microstructure joints electromigration creep bi |
| ISSN号 | 0361-5235 |
| 中文摘要 | Structural changes from high-density electric currents were examined in a eutectic In-Sn/Cu interconnect. Under electrical loading, Sn and In migrated in opposite directions, creating a partition of the Sn- and In-rich phases between the anode and the cathode. At the anode, a net gain of Sn atoms resulted in the formation of massive, columnar hillocks on the surface, but a net loss of In led to dissolution and disappearance of the In-rich intermetallic layer. At the cathode, the exodus of Sn left valleys adjacent to the In-rich regions on the surface, while the amount of the In-rich phase grew, due to the net influx of In at the expense of the In-rich intermetallic layer. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/33487]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | J. P. Daghfal,J. K. Shang. Current-induced phase partitioning in eutectic indium-tin pb-free solder interconnect[J]. Journal of Electronic Materials,2007,36(10):1372-1377. |
| APA | J. P. Daghfal,&J. K. Shang.(2007).Current-induced phase partitioning in eutectic indium-tin pb-free solder interconnect.Journal of Electronic Materials,36(10),1372-1377. |
| MLA | J. P. Daghfal,et al."Current-induced phase partitioning in eutectic indium-tin pb-free solder interconnect".Journal of Electronic Materials 36.10(2007):1372-1377. |
入库方式： OAI收割
来源：金属研究所
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