中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Anisotropic current-induced electroresistance effect in low-doped La0.9Sr0.1MnO3 thin films

文献类型:期刊论文

作者J. F. Feng ; K. Zhao ; J. G. Zhao ; Y. H. Huang ; M. He ; H. B. Lu ; X. F. Han ; W. S. Zhan
刊名Physica B-Condensed Matter
出版日期2007
卷号387期号:1-2页码:156-160
关键词manganites thin films electrical transport properties insulator-metal transition colossal magnetoresistance manganese oxide la1-xsrxmno3 perovskites manganites
ISSN号0921-4526
中文摘要We have studied the giant negative electroresistance (ER) in strips and pillars of single-layer La0.9Sr0.1MnO3 films fabricated by microfabrication patterning processes, and observed the different voltage-current (V-I) characteristics under current-in-plane (CIP) and current-perpendicular-to-plane (CPP) measurement modes, around room temperature. For the CIP mode, V-I curves show an asymmetry with jumps at the negative bias currents, while a symmetrical hysteresis against the polarity for the CPP one. The mechanism is illuminated in the letter. Furthermore, a large ER is obtained for both modes and the ER ratios increase monotonically with the temperature and bias current, suggestive of a promising potential in future device developments. (c) 2006 Elsevier B.V. All rights reserved.
原文出处://WOS:000243886100026
公开日期2012-04-13
源URL[http://ir.imr.ac.cn/handle/321006/33530]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
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J. F. Feng,K. Zhao,J. G. Zhao,et al. Anisotropic current-induced electroresistance effect in low-doped La0.9Sr0.1MnO3 thin films[J]. Physica B-Condensed Matter,2007,387(1-2):156-160.
APA J. F. Feng.,K. Zhao.,J. G. Zhao.,Y. H. Huang.,M. He.,...&W. S. Zhan.(2007).Anisotropic current-induced electroresistance effect in low-doped La0.9Sr0.1MnO3 thin films.Physica B-Condensed Matter,387(1-2),156-160.
MLA J. F. Feng,et al."Anisotropic current-induced electroresistance effect in low-doped La0.9Sr0.1MnO3 thin films".Physica B-Condensed Matter 387.1-2(2007):156-160.

入库方式: OAI收割

来源:金属研究所

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