Synthesis of silicon carbide films by combined implantation with sputtering techniques
文献类型：期刊论文
| 作者 | G. B. Li ; J. Z. Zhang ; Q. L. Meng ; W. Z. Li |
| 刊名 | Applied Surface Science
 |
| 出版日期 | 2007 |
| 卷号 | 253期号:20页码:8428-8434 |
| 关键词 | silicon carbide MEVVA IBAD ion implantation chemical-vapor-deposition thin-films sic films raman-scattering internal-stress laser-ablation 3c-sic films growth beam relaxation |
| ISSN号 | 0169-4332 |
| 中文摘要 | Silicon carbide (SiC) films were synthesized by combined metal vapor vacuum are (MEVVA) ion implantation with ion beam assisted deposition (IBAD) techniques. Carbon ions with 40 keV energy were implanted into Si(1 0 0) substrates at ion fluence of 5 x 10(16) ions/cm(2). Then silicon and carbon atoms were co-sputtered on the Si(1 0 0) substrate surface, at the same time the samples underwent assistant Ar-ion irradiation at 20 keV energy. A group of samples with substrate temperatures ranging from 400 to 600 degrees C were used to analyze the effect of temperature on formation of the SiC film. Influence of the assistant Ar-ion irradiation was also investigated. The structure, morphology and mechanical properties of the deposited films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and nanoindentation, respectively. The bond configurations were obtained from IR absorption and Raman spectroscopy. The experimental results indicate that microcrystalline SiC films were synthesized at 600 degrees C. The substrate temperature and assistant Ar-ion irradiation played a key role in the process. The assistant Ar-ion irradiation also helps increasing the nanohardness and bulk modulus of the SiC films. The best values of nanohardness and bulk modulus were 24.1 and 282.6 GPa, respectively. (c) 2007 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/33628]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | G. B. Li,J. Z. Zhang,Q. L. Meng,et al. Synthesis of silicon carbide films by combined implantation with sputtering techniques[J]. Applied Surface Science,2007,253(20):8428-8434. |
| APA | G. B. Li,J. Z. Zhang,Q. L. Meng,&W. Z. Li.(2007).Synthesis of silicon carbide films by combined implantation with sputtering techniques.Applied Surface Science,253(20),8428-8434. |
| MLA | G. B. Li,et al."Synthesis of silicon carbide films by combined implantation with sputtering techniques".Applied Surface Science 253.20(2007):8428-8434. |
入库方式： OAI收割
来源：金属研究所
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