Single adatom site exchange during the Ge growth on group V element covered Si(001)
文献类型：期刊论文
| 作者 | E. Z. Liu ; C. Y. Wang |
| 刊名 | Scripta Materialia
 |
| 出版日期 | 2007 |
| 卷号 | 56期号:2页码:113-116 |
| 关键词 | surface segregation surfactant semiconductor kinetics first principle electron theory mediated epitaxial-growth dimer-exchange surfactants diffusion energy |
| ISSN号 | 1359-6462 |
| 中文摘要 | The site exchange between Ge and surfactant atoms in the growth of Ge on the group V element-covered Si(001) has been studied using first-principles total energy calculations. On the Bi-covered Si(001) and the As-covered Si(001), a single adatom site, exchange process can occur energetically, but with different pathways. The energy barriers for the single adatom site exchange are very small. The site exchange can therefore occur very easily. This will suppress the Ge diffusion, and favors the layer-by-layer growth mode. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/33692]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | E. Z. Liu,C. Y. Wang. Single adatom site exchange during the Ge growth on group V element covered Si(001)[J]. Scripta Materialia,2007,56(2):113-116. |
| APA | E. Z. Liu,&C. Y. Wang.(2007).Single adatom site exchange during the Ge growth on group V element covered Si(001).Scripta Materialia,56(2),113-116. |
| MLA | E. Z. Liu,et al."Single adatom site exchange during the Ge growth on group V element covered Si(001)".Scripta Materialia 56.2(2007):113-116. |
入库方式： OAI收割
来源：金属研究所
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