Kinetic Monte Carlo simulation of deposition of Co thin film on Cu(001)
文献类型:期刊论文
作者 | Z. L. Liu ; Y. L. Shi ; X. B. Jing ; L. Yu ; K. L. Yao |
刊名 | Plasma Science & Technology
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出版日期 | 2007 |
卷号 | 9期号:5页码:550-555 |
关键词 | heteroepitaxial growth kinetic Monte Carlo growth mode film structure giant magnetoresistance vapor-deposition growth exchange surface multilayers cu(100) superlattices adatoms energy |
ISSN号 | 1009-0630 |
中文摘要 | A kinetic Monte Carlo (kMC) simulation is conducted to study the growth of ultrathin film of Co on Cu(001) surface. The many-body, tight-binding potential model is used in the simulation to represent the interatomic potential. The film morphology of heteroepitaxial Co film on a Cu(001) substrate at the transient and final state conditions with various incident energies is simulated. The Co covered area and the thickness of the film growth of the first two layers are investigated. The simulation results show that the incident energy influences the film growth and structure. There exists a transition energy where the interfacial roughness is minimum. There are some void regions in the film in the final state, because of the influence of the island growth in the first few layers. In addition, there are deviations from ideal layer-by-layer growth at a coverage from 0 similar to 2 monolayers (ML). |
原文出处 | |
公开日期 | 2012-04-13 |
源URL | [http://ir.imr.ac.cn/handle/321006/33725] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | Z. L. Liu,Y. L. Shi,X. B. Jing,et al. Kinetic Monte Carlo simulation of deposition of Co thin film on Cu(001)[J]. Plasma Science & Technology,2007,9(5):550-555. |
APA | Z. L. Liu,Y. L. Shi,X. B. Jing,L. Yu,&K. L. Yao.(2007).Kinetic Monte Carlo simulation of deposition of Co thin film on Cu(001).Plasma Science & Technology,9(5),550-555. |
MLA | Z. L. Liu,et al."Kinetic Monte Carlo simulation of deposition of Co thin film on Cu(001)".Plasma Science & Technology 9.5(2007):550-555. |
入库方式: OAI收割
来源:金属研究所
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