Synthesis and photoluminescent property of AlN nanobelt array
文献类型：期刊论文
| 作者 | Y. B. Tang ; H. T. Cong ; F. Li ; H. M. Cheng |
| 刊名 | Diamond and Related Materials
 |
| 出版日期 | 2007 |
| 卷号 | 16期号:3页码:537-541 |
| 关键词 | aluminum nitride nanostructures optical properties nanocrystalline aluminum nitride field-emission growth nanotubes nanowires parameters defects route gan |
| ISSN号 | 0925-9635 |
| 中文摘要 | An AlN nanobelt array has been synthesized on Si substrate by an oxide-assisted vapor transport and condensation method at 900 degrees C. The nanobelts are 1-3 mu m in length, 20-150 mu m in width, and the ratio of width to thickness is in the range of 2-5. The nanobelts are single-crystalline hexagonal wurtzite AlN with [001] growth direction. The growth mechanism and photoluminescent property of the AlN nanobelt array were discussed. (c) 2006 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/33831]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Y. B. Tang,H. T. Cong,F. Li,et al. Synthesis and photoluminescent property of AlN nanobelt array[J]. Diamond and Related Materials,2007,16(3):537-541. |
| APA | Y. B. Tang,H. T. Cong,F. Li,&H. M. Cheng.(2007).Synthesis and photoluminescent property of AlN nanobelt array.Diamond and Related Materials,16(3),537-541. |
| MLA | Y. B. Tang,et al."Synthesis and photoluminescent property of AlN nanobelt array".Diamond and Related Materials 16.3(2007):537-541. |
入库方式： OAI收割
来源：金属研究所
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