中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Fatigue suppression of ferroelectric Pb1-xBax(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel method

文献类型:期刊论文

作者Y. Wang ; K. F. Wang ; C. Zhu ; T. Wei ; J. S. Zhu ; J. M. Liu
刊名Journal of Applied Physics
出版日期2007
卷号101期号:4
关键词polarization fatigue electrodes capacitors memories titanate scenarios model
ISSN号0021-8979
中文摘要The polarization fatigue behavior of ferroelectric Pb1-xBax(Zr0.52Ti0.48)O-3 (PBZT) thin films deposited on Pt-coated silicon wafers by sol-gel method is investigated. The fatigue endurance is significantly enhanced upon Ba doping and almost fatigue-free performance up to 1010 switching cycles for PBZT (x=0.1) thin films are observed at room temperature. It is revealed that Ba doping up to x=0.1 results in a 70% decrease of oxygen vacancies in the films. The improved fatigue endurance is attributed to the enhanced oxygen ion stability and suppressed oxygen vacancies.
原文出处://WOS:000244530800102
公开日期2012-04-13
源URL[http://ir.imr.ac.cn/handle/321006/33881]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Y. Wang,K. F. Wang,C. Zhu,et al. Fatigue suppression of ferroelectric Pb1-xBax(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel method[J]. Journal of Applied Physics,2007,101(4).
APA Y. Wang,K. F. Wang,C. Zhu,T. Wei,J. S. Zhu,&J. M. Liu.(2007).Fatigue suppression of ferroelectric Pb1-xBax(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel method.Journal of Applied Physics,101(4).
MLA Y. Wang,et al."Fatigue suppression of ferroelectric Pb1-xBax(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel method".Journal of Applied Physics 101.4(2007).

入库方式: OAI收割

来源:金属研究所

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