中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Defect-induced charge-order melting in thin films of Pr0.5Ca0.5MnO3

文献类型:期刊论文

作者Y. Q. Zhang ; Y. L. Zhu ; Z. D. Zhang ; J. Aarts
刊名Journal of Applied Physics
出版日期2007
卷号101期号:6
关键词magnetic-field
ISSN号0021-8979
中文摘要We have investigated the relation between defect structure and charge order melting in thin films of epitaxial Pr0.5Ca0.5MnO3 (PCMO), grown under strain on SrTiO3. We compared the behavior of an 80 nm film grown in one deposition step at 840 degrees C with the behavior of a film grown in two steps. In the two-step case, a thin PCMO layer of 10 nm was deposited at 120 degrees C, followed by 70 nm deposited at 840 degrees C. The increase of the growth temperature leads to complete crystallization of the first layer and the lattice constants of the two-step grown film indicate that tensile strain is still present. On the other hand, a magnetic field of only 5 T is required to melt the charge-order state in the two-step grown film, which is a much lower than the value for the normally grown film. This appears to be connected to a larger amount of threading dislocations present in the first (recrystallized) layer. (c) 2007 American Institute of Physics.
原文出处://WOS:000245317700105
公开日期2012-04-13
源URL[http://ir.imr.ac.cn/handle/321006/34059]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Y. Q. Zhang,Y. L. Zhu,Z. D. Zhang,et al. Defect-induced charge-order melting in thin films of Pr0.5Ca0.5MnO3[J]. Journal of Applied Physics,2007,101(6).
APA Y. Q. Zhang,Y. L. Zhu,Z. D. Zhang,&J. Aarts.(2007).Defect-induced charge-order melting in thin films of Pr0.5Ca0.5MnO3.Journal of Applied Physics,101(6).
MLA Y. Q. Zhang,et al."Defect-induced charge-order melting in thin films of Pr0.5Ca0.5MnO3".Journal of Applied Physics 101.6(2007).

入库方式: OAI收割

来源:金属研究所

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