Transient infrared laser-induced photovoltaic effect of ZnO/MgB2 heterostructures
文献类型：期刊论文
| 作者 | S. Q. Zhao ; K. Zhao ; Q. L. Zhou ; Y. L. Zhou ; S. F. Wang ; T. Y. Ning |
| 刊名 | Journal of Physics D-Applied Physics
 |
| 出版日期 | 2007 |
| 卷号 | 40期号:15页码:4489-4492 |
| 关键词 | molecular-beam epitaxy mgb2 thin-films critical-current density light-emitting-diodes room-temperature zno films deposition superconductivity |
| ISSN号 | 0022-3727 |
| 中文摘要 | We report on the infrared laser-induced photovoltaic effect of a heterostructure comprising a n-ZnO film with an electron concentration of 1.6 x 10(21) cm(-3) and a MgB2 film with a high carrier concentration of 1.8 x 10(23) cm(-3) at room temperature. Current-voltage characteristics of the structures have good rectifying diode-like behaviour. An open-circuit photovoltage of 10 ns rise time and 20 ns full width at half-maximum was observed under the illumination of a 1.064 mu m pulsed laser for a duration of 25 ps. When the junction was irradiated by a 10.6 mu m CO2 laser pulse for 60 ns, a transient photovoltaic signal of similar to 27 mV occurred with a rise time of similar to 60 ns. A possible mechanism of the observed phenomena is discussed based on the laser-induced hot carrier photovoltaic effect. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34074]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | S. Q. Zhao,K. Zhao,Q. L. Zhou,et al. Transient infrared laser-induced photovoltaic effect of ZnO/MgB2 heterostructures[J]. Journal of Physics D-Applied Physics,2007,40(15):4489-4492. |
| APA | S. Q. Zhao,K. Zhao,Q. L. Zhou,Y. L. Zhou,S. F. Wang,&T. Y. Ning.(2007).Transient infrared laser-induced photovoltaic effect of ZnO/MgB2 heterostructures.Journal of Physics D-Applied Physics,40(15),4489-4492. |
| MLA | S. Q. Zhao,et al."Transient infrared laser-induced photovoltaic effect of ZnO/MgB2 heterostructures".Journal of Physics D-Applied Physics 40.15(2007):4489-4492. |
入库方式： OAI收割
来源：金属研究所
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