Single-electron transport driven by surface acoustic waves in quasi-one-dimensional channel
文献类型：期刊论文
| 作者 | H. Z. Guo ; X. R. Chen ; J. Gao |
| 刊名 | Physics Letters A
 |
| 出版日期 | 2006 |
| 卷号 | 359期号:2页码:157-160 |
| 关键词 | single-electron tunneling electronic transport acoustoelectric effect SAW quantized acoustoelectric current gas nonadiabaticity |
| ISSN号 | 0375-9601 |
| 中文摘要 | Fourier grid Hamiltonian method is applied to calculate the quantized acoustoelectric current induced by surface acoustic wave (SAW) in a quasi-one-dimensional channel defined in a GaAs-Al(x)Ga(1-x)As heterostructure by split gate. Using simple models for the electrostatic potential barrier and piezoelectric potential, we obtain the first quantized plateau. Moreover, the role of the parameter beta, defined as a ratio of piezoelectric potential amplitude to the effective height of electrostatic potential barrier induced by split gate, is also examined during the calculations of the instantaneous ground state energies and the single-electron tunneling probabilities. The flatness of the plateau is also discussed. (c) 2006 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34221]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | H. Z. Guo,X. R. Chen,J. Gao. Single-electron transport driven by surface acoustic waves in quasi-one-dimensional channel[J]. Physics Letters A,2006,359(2):157-160. |
| APA | H. Z. Guo,X. R. Chen,&J. Gao.(2006).Single-electron transport driven by surface acoustic waves in quasi-one-dimensional channel.Physics Letters A,359(2),157-160. |
| MLA | H. Z. Guo,et al."Single-electron transport driven by surface acoustic waves in quasi-one-dimensional channel".Physics Letters A 359.2(2006):157-160. |
入库方式： OAI收割
来源：金属研究所
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