Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation: A first-principles study
文献类型：期刊论文
| 作者 | E. Z. Liu ; C. Y. Wang |
| 刊名 | Surface Science
 |
| 出版日期 | 2006 |
| 卷号 | 600期号:10页码:2007-2010 |
| 关键词 | density-functional calculations gallium arsenide indium arsenide growth mode transition surface thermodynamics augmented-wave method ab-initio ge |
| ISSN号 | 0039-6028 |
| 中文摘要 | Based on first-principles density-functional pseudopotential calculations, the growth of InAs on the GaAs(001) surface has been studied. By analyzing the free energies of the surfaces with different thicknesses of the InAs coverages, the critical thickness of the layer-by-layer (2D) to island (3D) growth mode transition is predicted to be around 1.5 ML. Comparing the total energy differences between layer-by-layer growth models and 3D island models, the mechanism of the 2D-3D growth mode transition near the critical thickness (theta(crit)) is studied which indicates that at the initial stage of InAs quantum dots formation, small 3D islands are formed randomly. (c) 2006 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34345]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | E. Z. Liu,C. Y. Wang. Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation: A first-principles study[J]. Surface Science,2006,600(10):2007-2010. |
| APA | E. Z. Liu,&C. Y. Wang.(2006).Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation: A first-principles study.Surface Science,600(10),2007-2010. |
| MLA | E. Z. Liu,et al."Energetics of the growth mode transition in InAs/GaAs(001) small quantum dot formation: A first-principles study".Surface Science 600.10(2006):2007-2010. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。