Adsorption, diffusion, and site exchange for Ge ad-dimers on Sb-covered Si(001) from first-principles total-energy calculations
文献类型：期刊论文
| 作者 | E. Z. Liu ; C. Y. Wang ; J. T. Wang |
| 刊名 | Physical Review B
 |
| 出版日期 | 2006 |
| 卷号 | 74期号:7 |
| 关键词 | mediated epitaxial-growth surfactants |
| ISSN号 | 1098-0121 |
| 中文摘要 | The adsorption and diffusion of Ge adatoms and ad-dimers on the one-monolayer Sb-covered Si(001) surface are studied using first-principles total-energy calculations. It is shown that Ge adatoms and ad-dimers can both break Sb dimers because of the weak bonding of the Sb dimers on Si(001). As a result, the most stable sites are both on the Sb dimer rows for Ge adatoms and ad-dimers, which is in significant contrast to the conventional picture that the most stable site for a Ge ad-dimer is in the trough between the group-V element dimer rows. We have also examined the energetics of the site exchange between Ge and Sb atoms for the surfactant-mediated growth and find that Ge ad-dimers tend to exchange with the subsurface Sb atoms one by one perpendicular to the surface dimer rows. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34346]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | E. Z. Liu,C. Y. Wang,J. T. Wang. Adsorption, diffusion, and site exchange for Ge ad-dimers on Sb-covered Si(001) from first-principles total-energy calculations[J]. Physical Review B,2006,74(7). |
| APA | E. Z. Liu,C. Y. Wang,&J. T. Wang.(2006).Adsorption, diffusion, and site exchange for Ge ad-dimers on Sb-covered Si(001) from first-principles total-energy calculations.Physical Review B,74(7). |
| MLA | E. Z. Liu,et al."Adsorption, diffusion, and site exchange for Ge ad-dimers on Sb-covered Si(001) from first-principles total-energy calculations".Physical Review B 74.7(2006). |
入库方式： OAI收割
来源：金属研究所
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