Characterization and photoluminescence of AIN : Eu films
文献类型：期刊论文
| 作者 | F. S. Liu ; H. W. Dong ; Q. L. Liu ; J. K. Liang ; J. Luo ; Y. Zhang ; L. T. Yang ; G. H. Rao |
| 刊名 | Optical Materials
 |
| 出版日期 | 2006 |
| 卷号 | 28期号:8-9页码:1029-1036 |
| 关键词 | luminescence semiconductor A1N : Eu film red-light emission aln thin-films doped gan visible emission tb ions er nitride electroluminescence cathodoluminescence voltage |
| ISSN号 | 0925-3467 |
| 中文摘要 | Two serials of Eu3+ doped AlN films are prepared by means of magnetron RF reactive sputtering under different RF powers and N-2/(N-2 + Ar) ratios. XRD analysis indicates that the films change from amorphous to c-axis oriented crystalline as the RF power increases or as the N-2/(N-2 + Ar) ratio decreases. Lower N-2/(N-2 + Ar) ratio and higher RF power enhance the deposition rate and crystallinity. The grain size and surface roughness observed by SEM and AFM increase with the increase of the RF power. The emission from 5 Do to F-7(J) (J = 0-4) of Eu3+ is observed in the PL spectra for all the crystalline films, and the D-5(0) to F-7(2) transition of the films grown at 300 W has double exponential decays, 38 and 161 mu s. The crystalline quality of the films improves the photoluminescence intensity. (C) 2005 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-13 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34348]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | F. S. Liu,H. W. Dong,Q. L. Liu,et al. Characterization and photoluminescence of AIN : Eu films[J]. Optical Materials,2006,28(8-9):1029-1036. |
| APA | F. S. Liu.,H. W. Dong.,Q. L. Liu.,J. K. Liang.,J. Luo.,...&G. H. Rao.(2006).Characterization and photoluminescence of AIN : Eu films.Optical Materials,28(8-9),1029-1036. |
| MLA | F. S. Liu,et al."Characterization and photoluminescence of AIN : Eu films".Optical Materials 28.8-9(2006):1029-1036. |
入库方式： OAI收割
来源：金属研究所
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