Ge nano-layer fabricated by high-fluence low-energy ion implantation
文献类型：期刊论文
| 作者 | T. C. Lu ; S. B. Dun ; Q. Hu ; S. B. Zhang ; Z. An ; Y. M. Duan ; S. Zhu ; Q. M. Wei ; L. M. Wang |
| 刊名 | Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
 |
| 出版日期 | 2006 |
| 卷号 | 250页码:183-187 |
| 关键词 | Ge nano-layer ion implantation laser Raman scattering photoluminescence transmission electron microscopy X-ray diffraction sio2 film nanocrystals photoluminescence sio2-films emission si1-xgex matrix growth silica blue |
| ISSN号 | 0168-583X |
| 中文摘要 | A Ge nano-layer embedded in the surface layer of an amorphous SiO2 film was fabricated by high-fluence low-energy ion implantation. The component, phase, nano-structure and luminescence properties of the nano-layer were studied by means of Rutherford backscattering, glancing incident X-ray diffraction, laser Raman scattering, transmission electron microscopy and photoluminescence. The relation between nano-particle characteristics and ion fluence was also studied. The results indicate that nano-crystalline Ge and nano-amorphous Ge particles coexist in the nano-layer and the ratio of nano-crystalline Ge to nano-particle Ge increases with increasing ion fluence. The intensity of photoluminescence from the nano-layer increases with increasing ion fluence also. Prepared with certain ion fluences, high-density nano-layers composed of uniform-sized nano-particles can be observed. (c) 2006 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34386]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | T. C. Lu,S. B. Dun,Q. Hu,et al. Ge nano-layer fabricated by high-fluence low-energy ion implantation[J]. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,2006,250:183-187. |
| APA | T. C. Lu.,S. B. Dun.,Q. Hu.,S. B. Zhang.,Z. An.,...&L. M. Wang.(2006).Ge nano-layer fabricated by high-fluence low-energy ion implantation.Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,250,183-187. |
| MLA | T. C. Lu,et al."Ge nano-layer fabricated by high-fluence low-energy ion implantation".Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 250(2006):183-187. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。