Experimental study of the organic light emitting diode with a p-type silicon anode
文献类型:期刊论文
作者 | G. L. Ma ; A. G. Xu ; G. Z. Ran ; Y. P. Qiao ; B. R. Zhang ; W. X. Chen ; L. Dai ; G. G. Qin |
刊名 | Thin Solid Films
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出版日期 | 2006 |
卷号 | 496期号:2页码:665-668 |
关键词 | silicon oxide organic light emitting diode electrical properties and measurement silicon anode conjugated oligomer film porous silicon interface devices electroluminescence performance electrodes growth oxide gan |
ISSN号 | 0040-6090 |
中文摘要 | We have fabricated and studied an organic light emitting diode (OLED) with a p-type silicon anode and a SiO2 buffer layer between the anode and the organic layers which emits light from a semitransparent top Yb/AU Cathode. The luminance of the OLED is up to 5600 cd/m(2) at 17 V and 1800 mA/cm(2), the current efficiency is 0.31 cd/A. Both its luminance and current efficiency are much higher than those of the OLEDs with silicon as the anodes reported previously. The enhancement of the luminance and efficiency can be attributed to an improved balance between the hole and electron-injection through two efficient ways: 1) restraining the hole-injection by inserting an ultra-thin SiO2 buffer layer between the Si anode and the organic layers; and 2) enhancing the electron-injection by using a low work function, low optical reflectance and absorption semitransparent Yb/AU cathode. (c) 2005 Elsevier B.V. All rights reserved. |
原文出处 | |
公开日期 | 2012-04-14 |
源URL | [http://ir.imr.ac.cn/handle/321006/34393] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | G. L. Ma,A. G. Xu,G. Z. Ran,et al. Experimental study of the organic light emitting diode with a p-type silicon anode[J]. Thin Solid Films,2006,496(2):665-668. |
APA | G. L. Ma.,A. G. Xu.,G. Z. Ran.,Y. P. Qiao.,B. R. Zhang.,...&G. G. Qin.(2006).Experimental study of the organic light emitting diode with a p-type silicon anode.Thin Solid Films,496(2),665-668. |
MLA | G. L. Ma,et al."Experimental study of the organic light emitting diode with a p-type silicon anode".Thin Solid Films 496.2(2006):665-668. |
入库方式: OAI收割
来源:金属研究所
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