Phase separation enhanced interfacial reactions in complex high-k dielectric films
文献类型：期刊论文
| 作者 | X. Y. Qiu ; F. Gao ; H. W. Liu ; J. S. Zhu ; J. M. Liu |
| 刊名 | Integrated Ferroelectrics
 |
| 出版日期 | 2006 |
| 卷号 | 86页码:13-19 |
| 关键词 | phase separation interfacial reaction high-k dielectric film pulsed-laser deposition silicate thin-films thermal-stability gate property hfo2 |
| ISSN号 | 1058-4587 |
| 中文摘要 | Amorphous CaZrOx, ZrAlxSiyOz and HfAlOx complex high-k dielectric films are deposited by pulsed laser deposition, and their microstructural characteristics and interfacial reactions between deposited films and Si substrates during high temperature annealing processes are investigated by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. An essential finding is that nano-scale phase separation appears to be a common phenomenon for these amorphous films. The nonstoichiometric ZrOx or HfOx clusters precipitating from the amorphous matrix either react with silicon on the interface to form silicate or silicide interfacial layer, or nucleate and grow into nanosized crystals embedded in the outer layer of the dielectric films, which degrades the electrical performances of films. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34430]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | X. Y. Qiu,F. Gao,H. W. Liu,et al. Phase separation enhanced interfacial reactions in complex high-k dielectric films[J]. Integrated Ferroelectrics,2006,86:13-19. |
| APA | X. Y. Qiu,F. Gao,H. W. Liu,J. S. Zhu,&J. M. Liu.(2006).Phase separation enhanced interfacial reactions in complex high-k dielectric films.Integrated Ferroelectrics,86,13-19. |
| MLA | X. Y. Qiu,et al."Phase separation enhanced interfacial reactions in complex high-k dielectric films".Integrated Ferroelectrics 86(2006):13-19. |
入库方式： OAI收割
来源：金属研究所
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