Phase separation and interfacial reaction of high-k HfAlOx films prepared by pulsed-laser deposition in oxygen-deficient ambient
文献类型：期刊论文
| 作者 | X. Y. Qiu ; H. W. Liu ; F. Fang ; M. J. Ha ; J. M. Liu |
| 刊名 | Applied Physics Letters
 |
| 出版日期 | 2006 |
| 卷号 | 88期号:7 |
| 关键词 | silicate thin-films thermal-stability gate dielectrics si(100) zro2 capacitors diffusion kinetics oxides hfo2 |
| ISSN号 | 0003-6951 |
| 中文摘要 | Ultrathin high-k HfAlOx films on silicon wafers are prepared by pulsed-laser deposition in oxygen-defective ambient. The precipitation of HfOx clusters from HfAlOx matrix is revealed by x-ray photoelectron spectroscopy. It is argued that the HfOx clusters react with silicon to form Hf-silicide interfacial layer at a temperature as low as 600 degrees C, which evolves into Hf-silicate in the subsequent postannealing at 700 degrees C for 30 s in oxygen ambient. The optimized fabrication conditions developed to avoid the formation of interfacial layer is employed to prepare high-quality HfAlOx films of excellent electrical characteristics, such as a dielectric constant of 17.7, a small equivalent oxide thickness of 0.66 nm, a flatband voltage of 0.45 V, and a low leakage current density of 53.8 mA/cm(2) at 1 V gate voltage. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34431]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | X. Y. Qiu,H. W. Liu,F. Fang,et al. Phase separation and interfacial reaction of high-k HfAlOx films prepared by pulsed-laser deposition in oxygen-deficient ambient[J]. Applied Physics Letters,2006,88(7). |
| APA | X. Y. Qiu,H. W. Liu,F. Fang,M. J. Ha,&J. M. Liu.(2006).Phase separation and interfacial reaction of high-k HfAlOx films prepared by pulsed-laser deposition in oxygen-deficient ambient.Applied Physics Letters,88(7). |
| MLA | X. Y. Qiu,et al."Phase separation and interfacial reaction of high-k HfAlOx films prepared by pulsed-laser deposition in oxygen-deficient ambient".Applied Physics Letters 88.7(2006). |
入库方式： OAI收割
来源：金属研究所
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