Role of the dielectric capping layer in enhancement of light outcoupling for semitransparent metal-cathode organic light-emitting devices
文献类型：期刊论文
| 作者 | G. Z. Ran ; W. Q. Zhao ; G. L. Ma ; L. Dai ; G. G. Qin |
| 刊名 | Journal of Optics a-Pure and Applied Optics
 |
| 出版日期 | 2006 |
| 卷号 | 8期号:9页码:733-736 |
| 关键词 | light outcoupling organic light-emitting device surface plasmon optics of metal spontaneous emission efficiency diodes microcavities extraction anode |
| ISSN号 | 1464-4258 |
| 中文摘要 | We study theoretically the effects of the dielectric capping layer on the light outcoupling efficiency for semitransparent metal-cathode organic light-emitting devices. The outcoupling enhancement is co-determined by the improved transmission, the reduced (or improved) reflection, and the reduced absorption, as well as the suppressed surface plasmon polaritons. For some metals such as aluminium, the outcoupling efficiency can be enhanced largely by capping, but it can hardly be enhanced for some metals such as ytterbium. As a practical cathode, the Ag(15 nm)/TeO2(24 nm) combination achieves an outcoupling efficiency of 21.5%, competitive with bottom-emission devices. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34441]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | G. Z. Ran,W. Q. Zhao,G. L. Ma,et al. Role of the dielectric capping layer in enhancement of light outcoupling for semitransparent metal-cathode organic light-emitting devices[J]. Journal of Optics a-Pure and Applied Optics,2006,8(9):733-736. |
| APA | G. Z. Ran,W. Q. Zhao,G. L. Ma,L. Dai,&G. G. Qin.(2006).Role of the dielectric capping layer in enhancement of light outcoupling for semitransparent metal-cathode organic light-emitting devices.Journal of Optics a-Pure and Applied Optics,8(9),733-736. |
| MLA | G. Z. Ran,et al."Role of the dielectric capping layer in enhancement of light outcoupling for semitransparent metal-cathode organic light-emitting devices".Journal of Optics a-Pure and Applied Optics 8.9(2006):733-736. |
入库方式： OAI收割
来源：金属研究所
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