中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Initial growth of nanocrystalline diamond/beta-SiC composite films: A competitive deposition process

文献类型:期刊论文

作者Vvss Srikanth ; M. H. Tan ; X. Jiang
刊名Applied Physics Letters
出版日期2006
卷号88期号:7
关键词chemical-vapor-deposition silicon-carbide thin-films coatings steel interlayer adhesion carbon
ISSN号0003-6951
中文摘要Although nanocrystalline diamond/beta-SiC composite gradient interlayers have been successfully deposited in dealing with the problem of diamond thin-film adhesion to metallic substrates, initial growth process of the two components has not been described, so far. In this letter, we propose that the deposition of composite interlayer is possible because of a selective growth process of diamond and beta-SiC phases. There is a competition between the diamond and the beta-SiC crystallites to occupy the spaces available on the substrate. The space competition is during the initial nucleation period of the process and also during film growth, leading to the formation of the nanocrystalline composite. The secondary nucleation of beta-SiC on the existing diamond surfaces depends on the flux of incoming beta-SiC forming gas species. This provides us with a possibility to control phase structure and composition of the composite film by adjusting the tetramethyl silane flow rate.
原文出处://WOS:000235393700090
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/34461]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Vvss Srikanth,M. H. Tan,X. Jiang. Initial growth of nanocrystalline diamond/beta-SiC composite films: A competitive deposition process[J]. Applied Physics Letters,2006,88(7).
APA Vvss Srikanth,M. H. Tan,&X. Jiang.(2006).Initial growth of nanocrystalline diamond/beta-SiC composite films: A competitive deposition process.Applied Physics Letters,88(7).
MLA Vvss Srikanth,et al."Initial growth of nanocrystalline diamond/beta-SiC composite films: A competitive deposition process".Applied Physics Letters 88.7(2006).

入库方式: OAI收割

来源:金属研究所

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