中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Field emission from honeycomblike network of vertically aligned AlN nanoplatelets

文献类型:期刊论文

作者Y. B. Tang ; H. T. Cong ; H. M. Cheng
刊名Applied Physics Letters
出版日期2006
卷号89期号:9
关键词aluminum nitride nanotubes nanobelts nanowires coatings growth arrays
ISSN号0003-6951
中文摘要Honeycomblike network of vertically aligned AlN nanoplatelets was synthesized on etched Si substrate via a simple vapor phase method without catalyst. The nanoplatelets are hexagonal wurtzite AlN and their thickness is 10-100 nm. Field emission (FE) measurements showed that this nanostructure has a low turn-on field of 3.2-5.0 V/mu m and a threshold field of 7.8-12.1 V/mu m at sample-anode distances of 50-100 mu m. The fluctuation of FE current with density of 10 mA/cm(2) over 5 h is lower than 3%. The low turn-on and threshold fields and the small fluctuation of current demonstrate that this two-dimensional AlN nanostructure is a promising FE material. (c) 2006 American Institute of Physics.
原文出处://WOS:000240236600103
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/34486]  
专题金属研究所_中国科学院金属研究所
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GB/T 7714
Y. B. Tang,H. T. Cong,H. M. Cheng. Field emission from honeycomblike network of vertically aligned AlN nanoplatelets[J]. Applied Physics Letters,2006,89(9).
APA Y. B. Tang,H. T. Cong,&H. M. Cheng.(2006).Field emission from honeycomblike network of vertically aligned AlN nanoplatelets.Applied Physics Letters,89(9).
MLA Y. B. Tang,et al."Field emission from honeycomblike network of vertically aligned AlN nanoplatelets".Applied Physics Letters 89.9(2006).

入库方式: OAI收割

来源:金属研究所

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