中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Enhanced fatigue-endurance of ferroelectric Pb1-xSrx(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel method

文献类型:期刊论文

作者Y. Wang ; Q. Y. Shao ; J. M. Liu
刊名Applied Physics Letters
出版日期2006
卷号88期号:12
关键词polarization fatigue capacitors memories srbi2ta2o9 electrodes bi4ti3o12 scenarios titanate
ISSN号0003-6951
中文摘要The polarization fatigue behaviors of ferroelectric Pb1-xSrx(Zr0.52Ti0.48)O-3 (PSZT) thin films deposited on Pt-coated silicon wafers are investigated. Significantly enhanced fatigue endurance with increasing Sr doping and decreasing temperature is observed, and the almost fatigue-free performance up to 10(10) switching cycles for PSZT (x=0.2) thin films at room temperature is identified. The dc-conductivity measurements suggest almost 20 times decreasing of the oxygen vacancy density as the Sr doping increases from x=0 to x=0.2. It is believed that the Sr-doping enhances the stability of oxygen ions and suppresses oxygen vacancies, consequently resulting in the improved fatigue endurance. (c) 2006 American Institute of Physics.
原文出处://WOS:000236250100090
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/34534]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Y. Wang,Q. Y. Shao,J. M. Liu. Enhanced fatigue-endurance of ferroelectric Pb1-xSrx(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel method[J]. Applied Physics Letters,2006,88(12).
APA Y. Wang,Q. Y. Shao,&J. M. Liu.(2006).Enhanced fatigue-endurance of ferroelectric Pb1-xSrx(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel method.Applied Physics Letters,88(12).
MLA Y. Wang,et al."Enhanced fatigue-endurance of ferroelectric Pb1-xSrx(Zr0.52Ti0.48)O-3 thin films prepared by sol-gel method".Applied Physics Letters 88.12(2006).

入库方式: OAI收割

来源:金属研究所

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