中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
ZnO nanoparticles embedded in sapphire fabricated by ion implantation and annealing

文献类型:期刊论文

作者X. Xiang ; X. T. Zu ; S. Zhu ; Q. M. Wei ; C. F. Zhang ; K. Sun ; L. M. Wang
刊名Nanotechnology
出版日期2006
卷号17期号:10页码:2636-2640
ISSN号0957-4484
关键词optical-properties thermal-oxidation silica radiation nanocrystals nanowires matrix growth sio2 cu
中文摘要ZnO nanoparticles were fabricated in sapphire (alpha-Al2O3 single crystal) by Zn ion implantation (48 keV) at an ion fluence of 1x10(17) cm(-2) and subsequent thermal annealing in a flowing oxygen atmosphere. Transmission electron microscopy (TEM) analysis revealed that metallic Zn nanoparticles of 3-10 nm in dimensions formed in the as-implanted sample and that ZnO nanoparticles of 10-12 nm in dimensions formed after annealing at 600 degrees C. A broad absorption band, peaked at 280 nm, appeared in the as-implanted crystal, due to surface plasma resonance (SPR) absorption of metallic Zn nanoparticles. After annealing at 600 degrees C, ZnO nanoparticles resulted in an exciton absorption peak at 360 nm. The photoluminescence (PL) of the as-implanted sample was very weak when using a He-Cd 325 nm line as the excitation source. However, two emission peaks appeared in the PL spectrum of ZnO nanopraticles, i.e., one ultraviolet (UV) peak at 370 nm and the other a green peak at 500 nm. The emission at 500 nm is stronger and has potential applications in green/blue light-emitting devices.
原文出处://WOS:000238229100032
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/34590]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
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X. Xiang,X. T. Zu,S. Zhu,et al. ZnO nanoparticles embedded in sapphire fabricated by ion implantation and annealing[J]. Nanotechnology,2006,17(10):2636-2640.
APA X. Xiang.,X. T. Zu.,S. Zhu.,Q. M. Wei.,C. F. Zhang.,...&L. M. Wang.(2006).ZnO nanoparticles embedded in sapphire fabricated by ion implantation and annealing.Nanotechnology,17(10),2636-2640.
MLA X. Xiang,et al."ZnO nanoparticles embedded in sapphire fabricated by ion implantation and annealing".Nanotechnology 17.10(2006):2636-2640.

入库方式: OAI收割

来源:金属研究所

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