XPS and optical studies of Xe+-implanted and annealed YSZ single crystals
文献类型:期刊论文
作者 | X. Xiang ; X. T. Zu ; S. Zhu ; C. F. Zhang ; Z. G. Wang ; L. M. Wang ; R. C. Ewing |
刊名 | Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
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出版日期 | 2006 |
卷号 | 250页码:382-385 |
关键词 | optical absorption XPS ion implantation annealing yttria-stabilized-zirconia cubic zirconia radiation-damage spectroscopy xenon |
ISSN号 | 0168-583X |
中文摘要 | Xe+ ion implantation with 200 keV was completed at room temperature up to a fluence of 1 x 10(17) ion/cm(2) in yttria-stabilized zirconia. (YSZ) single crystals. Optical absorption and X-ray photoelectron spectroscopy (XPS) were used to characterize the changes of optical properties and charge state in the as-implanted and annealed crystals. A broad absorption band centered at 522 or 497 nm was observed in the optical absorption spectra of samples implanted with fluences of 1 x 10(16) ion/cm(2) and 1 x 10(17) ion/cm(2), respectively. These two absorption bands both disappeared due to recombination of color centers after annealing at 250 degrees C. XPS measurements showed two Gaussian components of O-1s spectrum assigned to [Zr-O] and [Y-O], respectively, in YSZ single crystals. After ion implantation, these two peaks merged into a single peak with the increasing etching depth. However, this single peak split into two Gaussian components again after annealing at 250 degrees C. The concentration of Xe decreased drastically after annealing at 900 degrees C. And the XPS measurement barely detected the Xe. There was no change in the photoluminescence of YSZ single crystals with a fluence of 1 x 10(17) ion/cm(2) after annealing up to 900 degrees C. (c) 2006 Elsevier B.V. All rights reserved. |
原文出处 | |
公开日期 | 2012-04-14 |
源URL | [http://ir.imr.ac.cn/handle/321006/34593] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | X. Xiang,X. T. Zu,S. Zhu,et al. XPS and optical studies of Xe+-implanted and annealed YSZ single crystals[J]. Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,2006,250:382-385. |
APA | X. Xiang.,X. T. Zu.,S. Zhu.,C. F. Zhang.,Z. G. Wang.,...&R. C. Ewing.(2006).XPS and optical studies of Xe+-implanted and annealed YSZ single crystals.Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms,250,382-385. |
MLA | X. Xiang,et al."XPS and optical studies of Xe+-implanted and annealed YSZ single crystals".Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms 250(2006):382-385. |
入库方式: OAI收割
来源:金属研究所
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