Effects of resistivity of a p-Si chip on the light-emitting efficiency of a top-emission organic light-emitting diode with the p-Si chip as the anode
文献类型：期刊论文
| 作者 | A. G. Xu ; G. Z. Ran ; Z. L. Wu ; G. L. Ma ; Y. P. Qiao ; Y. H. Xu ; B. R. Yang ; B. R. Zhang ; G. G. Qin |
| 刊名 | Physica Status Solidi a-Applications and Materials Science
 |
| 出版日期 | 2006 |
| 卷号 | 203期号:2页码:428-434 |
| 关键词 | 1.5 mu-m silicon anode thin-films devices cathode wavelength electrode bilayer layer |
| ISSN号 | 0031-8965 |
| 中文摘要 | For the top-emission organic light-emitting diode (TOLED) with a structure of p-Si/SiOx/N,N'-bis-(1-naphthl)-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB)/tris-(8-hydroxyquinoline) aluminum (AlQ)/Sm/Au, we found the resistivity of the p-Si anode has a great effect on the hole injection and hence on the light-emitting efficiency. Among the p-Si anode TOLEDs each having a resistivity of 10(-3), 10(-1), 1, 10, 20, 40, and 70 92 cm, the light-emitting power efficiency is highest for the one with a 40 92 cm p-Si anode. The existence of an optimum resistivity for the p-Si anode is mainly due to the near balance of hole injection with electron injection. When the p-Si resistivity and the device voltage are high enough, the hole-injection ability of the p-Si anode becomes weaker than that of an indium-tin oxide anode. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34619]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | A. G. Xu,G. Z. Ran,Z. L. Wu,et al. Effects of resistivity of a p-Si chip on the light-emitting efficiency of a top-emission organic light-emitting diode with the p-Si chip as the anode[J]. Physica Status Solidi a-Applications and Materials Science,2006,203(2):428-434. |
| APA | A. G. Xu.,G. Z. Ran.,Z. L. Wu.,G. L. Ma.,Y. P. Qiao.,...&G. G. Qin.(2006).Effects of resistivity of a p-Si chip on the light-emitting efficiency of a top-emission organic light-emitting diode with the p-Si chip as the anode.Physica Status Solidi a-Applications and Materials Science,203(2),428-434. |
| MLA | A. G. Xu,et al."Effects of resistivity of a p-Si chip on the light-emitting efficiency of a top-emission organic light-emitting diode with the p-Si chip as the anode".Physica Status Solidi a-Applications and Materials Science 203.2(2006):428-434. |
入库方式： OAI收割
来源：金属研究所
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