Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique
文献类型：期刊论文
| 作者 | S. W. Xue ; X. T. Zu ; X. Xiang ; H. Deng ; Z. Q. Xu |
| 刊名 | European Physical Journal-Applied Physics
 |
| 出版日期 | 2006 |
| 卷号 | 35期号:3页码:195-200 |
| 关键词 | chemical-vapor-deposition pulsed-laser deposition native point-defects zinc-oxide films electrical-properties optical-properties spray-pyrolysis transparent orientation origin |
| ISSN号 | 1286-0042 |
| 中文摘要 | Interconnected microstructural ZnO: Al thin films with low doping concentration (Al/Zn <= 1%) were deposited on ( 0001) sapphire substrates by the sol-gel technique. The effects of low doping concentration on the structural, optical and electrical properties of the films were investigated. Scanning electron microscope (SEM), X-ray diffraction (XRD), photoluminescence (PL), and four-point probe method were used to characterize the structural, optical and electrical properties. We found that with increasing the dopant concentration the interconnected thread becomes thinner, the ( 002) diffraction peak and the near band edge (NBE) emission are enhanced while the deep level emission (DLE) and the resistivity are decreased. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34630]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | S. W. Xue,X. T. Zu,X. Xiang,et al. Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique[J]. European Physical Journal-Applied Physics,2006,35(3):195-200. |
| APA | S. W. Xue,X. T. Zu,X. Xiang,H. Deng,&Z. Q. Xu.(2006).Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique.European Physical Journal-Applied Physics,35(3),195-200. |
| MLA | S. W. Xue,et al."Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique".European Physical Journal-Applied Physics 35.3(2006):195-200. |
入库方式： OAI收割
来源：金属研究所
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