中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique

文献类型:期刊论文

作者S. W. Xue ; X. T. Zu ; X. Xiang ; H. Deng ; Z. Q. Xu
刊名European Physical Journal-Applied Physics
出版日期2006
卷号35期号:3页码:195-200
关键词chemical-vapor-deposition pulsed-laser deposition native point-defects zinc-oxide films electrical-properties optical-properties spray-pyrolysis transparent orientation origin
ISSN号1286-0042
中文摘要Interconnected microstructural ZnO: Al thin films with low doping concentration (Al/Zn <= 1%) were deposited on ( 0001) sapphire substrates by the sol-gel technique. The effects of low doping concentration on the structural, optical and electrical properties of the films were investigated. Scanning electron microscope (SEM), X-ray diffraction (XRD), photoluminescence (PL), and four-point probe method were used to characterize the structural, optical and electrical properties. We found that with increasing the dopant concentration the interconnected thread becomes thinner, the ( 002) diffraction peak and the near band edge (NBE) emission are enhanced while the deep level emission (DLE) and the resistivity are decreased.
原文出处://WOS:000240239600009
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/34630]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
S. W. Xue,X. T. Zu,X. Xiang,et al. Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique[J]. European Physical Journal-Applied Physics,2006,35(3):195-200.
APA S. W. Xue,X. T. Zu,X. Xiang,H. Deng,&Z. Q. Xu.(2006).Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique.European Physical Journal-Applied Physics,35(3),195-200.
MLA S. W. Xue,et al."Effects of low doping concentration on interconnected microstructural ZnO : Al thin films prepared by the sol-gel technique".European Physical Journal-Applied Physics 35.3(2006):195-200.

入库方式: OAI收割

来源:金属研究所

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