Investigation on quenching at a high-angle Cu grain boundary on an atomic scale
文献类型：期刊论文
| 作者 | L. Zhang ; S. Q. Wang ; H. Q. Ye |
| 刊名 | Chinese Physics
 |
| 出版日期 | 2006 |
| 卷号 | 15期号:3页码:610-617 |
| 关键词 | molecular dynamics solidification crystal interface molecular-dynamics simulation melting transition tilt boundaries aluminum diffusion silicon copper |
| ISSN号 | 1009-1963 |
| 中文摘要 | We have performed molecular dynamics simulations of structural changes clue to quenching the melting interface at a Cu Sigma 5(310)/[001] symmetrical tilt grain boundary. The simulation results suggest that the grain boundary structures due to quenching are different from those clue to heating up to the same temperature. The calculated atom density profiles show that the grain boundary structures can be significantly changed as they are quenched to quite low temperatures. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34698]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | L. Zhang,S. Q. Wang,H. Q. Ye. Investigation on quenching at a high-angle Cu grain boundary on an atomic scale[J]. Chinese Physics,2006,15(3):610-617. |
| APA | L. Zhang,S. Q. Wang,&H. Q. Ye.(2006).Investigation on quenching at a high-angle Cu grain boundary on an atomic scale.Chinese Physics,15(3),610-617. |
| MLA | L. Zhang,et al."Investigation on quenching at a high-angle Cu grain boundary on an atomic scale".Chinese Physics 15.3(2006):610-617. |
入库方式： OAI收割
来源：金属研究所
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