Laser-induced thermoelectric voltage in normal state MgB2 thin films
文献类型：期刊论文
| 作者 | S. Q. Zhao ; Y. L. Zhou ; K. Zhao ; S. F. Wang ; Z. H. Chen ; K. J. Jin ; H. B. Lu ; B. L. Cheng ; G. Z. Yang |
| 刊名 | Applied Surface Science
 |
| 出版日期 | 2006 |
| 卷号 | 253期号:5页码:2671-2673 |
| 关键词 | MgB2 thin films laser-induced voltage thermoelectric effect room-temperature |
| ISSN号 | 0169-4332 |
| 中文摘要 | Laser-induced voltage has been observed in c-axis oriented MgB2 thin film at room temperature. The amplitude of the signal is approximately proportional to the film thickness. For the film with the thickness of 150 nm, a very fast response has been detected when the film was irradiated by a 308 nm pulsed laser of 20 ns duration. The rise time and full width at half-maximum of the signal are about 3 and 25 ns, respectively. The physical origin of the laser-induced voltage can be attributed to a transverse thermoelectricity due to the anisotropic thermopower in MgB2. (c) 2006 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34742]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | S. Q. Zhao,Y. L. Zhou,K. Zhao,et al. Laser-induced thermoelectric voltage in normal state MgB2 thin films[J]. Applied Surface Science,2006,253(5):2671-2673. |
| APA | S. Q. Zhao.,Y. L. Zhou.,K. Zhao.,S. F. Wang.,Z. H. Chen.,...&G. Z. Yang.(2006).Laser-induced thermoelectric voltage in normal state MgB2 thin films.Applied Surface Science,253(5),2671-2673. |
| MLA | S. Q. Zhao,et al."Laser-induced thermoelectric voltage in normal state MgB2 thin films".Applied Surface Science 253.5(2006):2671-2673. |
入库方式： OAI收割
来源：金属研究所
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