Investigations of the EPR parameters and substitutional sites of Ni3+ ions in CuGaS2 and AgGaS2 ternary semiconductors
文献类型：期刊论文
| 作者 | W. C. Zheng ; X. X. Wu ; Z. Qing ; H. Lv |
| 刊名 | Materials Science and Engineering B-Solid State Materials for Advanced Technology
 |
| 出版日期 | 2006 |
| 卷号 | 130期号:1-3页码:273-276 |
| 关键词 | defect formation electron paramagnetic resonance nickel crystal-field theory semiconductors electron-paramagnetic-resonance atomic screening constants co2+ ions chalcopyrite semiconductors ib-iii-vi2 semiconductors optical-absorption single-crystals scf functions cuals2 esr |
| ISSN号 | 0921-5107 |
| 中文摘要 | The electronic paramagnetic resonance (EPR) parameters (g factors g(parallel to), g(perpendicular to) and zero-field splitting D) of Ni3+ ions at both M+ (M = Cu, Ag) and Ga3+ sites in MGaS2 ternary semiconductors are calculated from the high-order perturbation formulas based on the two spin-orbit (SO) coupling parameter model for 3d(7) ions in tetragonal symmetry. The calculated results suggest that Ni3+ ions replace the monovalent M+ ions in MGaS2 crystals. This point is contrary to the previous assumption that Ni3+ ions substitute for the isovalent Ga3+ ions to attain the charge neutrality. The reasonableness of the suggestion is discussed. (c) 2006 Elsevier B.V. All rights reserved. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34759]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | W. C. Zheng,X. X. Wu,Z. Qing,et al. Investigations of the EPR parameters and substitutional sites of Ni3+ ions in CuGaS2 and AgGaS2 ternary semiconductors[J]. Materials Science and Engineering B-Solid State Materials for Advanced Technology,2006,130(1-3):273-276. |
| APA | W. C. Zheng,X. X. Wu,Z. Qing,&H. Lv.(2006).Investigations of the EPR parameters and substitutional sites of Ni3+ ions in CuGaS2 and AgGaS2 ternary semiconductors.Materials Science and Engineering B-Solid State Materials for Advanced Technology,130(1-3),273-276. |
| MLA | W. C. Zheng,et al."Investigations of the EPR parameters and substitutional sites of Ni3+ ions in CuGaS2 and AgGaS2 ternary semiconductors".Materials Science and Engineering B-Solid State Materials for Advanced Technology 130.1-3(2006):273-276. |
入库方式： OAI收割
来源：金属研究所
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