Synthesis, characterization and properties of B0.44C0.27N0.29 compounds
文献类型：期刊论文
| 作者 | S. Z. Bai ; Y. Bin ; W. H. Su |
| 刊名 | Acta Physica Sinica
 |
| 出版日期 | 2005 |
| 卷号 | 54期号:10页码:4627-4632 |
| 关键词 | B-C-N high temperature and high pressure Raman and infrared spectra boron-carbon-nitrogen thin-films nanotubes |
| ISSN号 | 1000-3290 |
| 中文摘要 | B-C-N compounds with different structures were synthesized by chemical reaction between Boracic acid and melamine, combined with heat treatment under vacuum and high pressure. An amorphous B-C-N precursor was prepared at 1273K under 10(-3) Pa. This amorphous B-C-N behaves as an insulator below 920K, and transforms into semiconductor above 920K. The B-C-N semiconductor shows different conductivity-temperature relationship in the temperature ranges of 973-1003K and 1013-1073K, and has conductivity activation energy of 0.34eV in the former range and 1.10eV in the latter range, indicating that conductivity mechanism of the B-C-N amorphous semiconductor is different in the two temperature ranges, Annealed for 40min. at 1473K under 3.5GPa, the amorphous B-C-N precursor crystallizes into hexagonal B-0.44 C-0.27 N-0.29 ( h-BCN) compound with lattice constants of a = 0.2515nm and c = 0.6684nm. Four strong Raman scattering peaks were observed at 1330, 1364, 1588 and 1617 cm(-1) in the h-BCN, of which the peaks located at 1330 and 1617 cm(-1) 1 are considered as characteristic Raman peaks of the h-BCN. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34789]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | S. Z. Bai,Y. Bin,W. H. Su. Synthesis, characterization and properties of B0.44C0.27N0.29 compounds[J]. Acta Physica Sinica,2005,54(10):4627-4632. |
| APA | S. Z. Bai,Y. Bin,&W. H. Su.(2005).Synthesis, characterization and properties of B0.44C0.27N0.29 compounds.Acta Physica Sinica,54(10),4627-4632. |
| MLA | S. Z. Bai,et al."Synthesis, characterization and properties of B0.44C0.27N0.29 compounds".Acta Physica Sinica 54.10(2005):4627-4632. |
入库方式： OAI收割
来源：金属研究所
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