An interface kinetics study of oxidation process of silicon
文献类型：期刊论文
| 作者 | F. Fang ; M. J. Ha ; X. Y. Qiu ; J. M. Liu |
| 刊名 | Integrated Ferroelectrics
 |
| 出版日期 | 2005 |
| 卷号 | 74页码:31-43 |
| 关键词 | oxidation kinetics transition region modeling thermal-oxidation oxide-films si(100) oxygen mechanism growth sio2 |
| ISSN号 | 1058-4587 |
| 中文摘要 | As well demonstrated in the Deal-Grove general model for thermal oxidation kinetics of silicon, a deviation from experiments on short-time oxidation regime is existed. Further study on the interface configuration and growth kinetics of oxidation process of silicon is performed. Various isotopic labeling experiments allow us to argue that this region of an "anomalously high rate near Si-SiO 2 interface represents a transition region between Si and fully oxidized SiO 2 layer, which may be viewed as an incompletely oxidized layer. We accordingly present a phenomenological improved Deal-Grove model. The calculated results fit much better than the Deal-Grove model prediction with the measured oxidation thickness for both dry- and wet-oxidation experiments. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34840]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | F. Fang,M. J. Ha,X. Y. Qiu,et al. An interface kinetics study of oxidation process of silicon[J]. Integrated Ferroelectrics,2005,74:31-43. |
| APA | F. Fang,M. J. Ha,X. Y. Qiu,&J. M. Liu.(2005).An interface kinetics study of oxidation process of silicon.Integrated Ferroelectrics,74,31-43. |
| MLA | F. Fang,et al."An interface kinetics study of oxidation process of silicon".Integrated Ferroelectrics 74(2005):31-43. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。