Study on high-temperature performances of 1.3-mu m InGaAsP-InP strained multiquantum-well buried-heterostructure lasers
文献类型：期刊论文
| 作者 | J. Y. Jin ; J. Shi ; D. C. Tian |
| 刊名 | Ieee Photonics Technology Letters
 |
| 出版日期 | 2005 |
| 卷号 | 17期号:2页码:276-278 |
| 关键词 | cavity length high-temperature performance multiquantum-well (MQW) output power degradation semiconductor lasers stripe width efficiency mode |
| ISSN号 | 1041-1135 |
| 中文摘要 | Stripe-width and cavity length dependencies of high-temperature performances of 1.3-mum InGaAsP-InP well-designed buried-hetrostructure strained multiquantum-well (MQW) lasers were investigated. The threshold currents, as low as 4.5110.5 mA and slope efficiencies as high as 0.48/0.42 mW/mA at 25 degreesC/85 degreesC were obtained in the MQW lasers with 1.5-mum width, 250-mum length, and 0.3/0.85 facet reflectivity. With temperature increasing from 25 degreesC to 85 degreesC, the MQW lasers exhibited lower output power degradation, the minimum value was 1.78 dB at an operation current of 45 mA. The MQW lasers were suitable for application in optical access networks. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34887]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | J. Y. Jin,J. Shi,D. C. Tian. Study on high-temperature performances of 1.3-mu m InGaAsP-InP strained multiquantum-well buried-heterostructure lasers[J]. Ieee Photonics Technology Letters,2005,17(2):276-278. |
| APA | J. Y. Jin,J. Shi,&D. C. Tian.(2005).Study on high-temperature performances of 1.3-mu m InGaAsP-InP strained multiquantum-well buried-heterostructure lasers.Ieee Photonics Technology Letters,17(2),276-278. |
| MLA | J. Y. Jin,et al."Study on high-temperature performances of 1.3-mu m InGaAsP-InP strained multiquantum-well buried-heterostructure lasers".Ieee Photonics Technology Letters 17.2(2005):276-278. |
入库方式： OAI收割
来源：金属研究所
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