中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Substrate temperature calculation for pulsed bias arc ion plating

文献类型:期刊论文

作者G. Q. Lin ; X. Bai ; C. Dong ; W. Lishi ; L. H. Wen
刊名Surface & Coatings Technology
出版日期2005
卷号194期号:2-3页码:325-329
关键词substrate temperature arc ion plating pulsed bias tin deposition voltage
ISSN号0257-8972
中文摘要The main factors influencing substrate temperature such as ion bombardment, heat radiation, and heat conductivity are analyzed for Pulsed-Bias Arc Ion Plating (PBAIP). The wave profile of the pulsed bias voltage, varying from -1000 to 0 V, is basically rectangle. This characteristic periodic energy input has an average energy density being equal to the product of that of the DC Arc Ion Plating (DCAIP) and the duty cycle in PBAIP. A temperature model based on energy conservation for the substrate temperature is thus established, which incorporates input ion power, heat radiation and heat conductivity. Experiments are also conducted to verify the calculation. (c) 2004 Elsevier B.V. All rights reserved.
原文出处://WOS:000227812300020
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/34923]  
专题金属研究所_中国科学院金属研究所
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GB/T 7714
G. Q. Lin,X. Bai,C. Dong,et al. Substrate temperature calculation for pulsed bias arc ion plating[J]. Surface & Coatings Technology,2005,194(2-3):325-329.
APA G. Q. Lin,X. Bai,C. Dong,W. Lishi,&L. H. Wen.(2005).Substrate temperature calculation for pulsed bias arc ion plating.Surface & Coatings Technology,194(2-3),325-329.
MLA G. Q. Lin,et al."Substrate temperature calculation for pulsed bias arc ion plating".Surface & Coatings Technology 194.2-3(2005):325-329.

入库方式: OAI收割

来源:金属研究所

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