High-performance dual-gate carbon nanotube FETs with 40-nm gate length
文献类型：期刊论文
| 作者 | Y. M. Lin ; J. Appenzeller ; Z. H. Chen ; Z. G. Chen ; H. M. Cheng ; P. Avouris |
| 刊名 | Ieee Electron Device Letters
 |
| 出版日期 | 2005 |
| 卷号 | 26期号:11页码:823-825 |
| 关键词 | carbon nanotube (CN) dual gate field-effect transistor (FET) short-channel effect field-effect transistors |
| ISSN号 | 0741-3106 |
| 中文摘要 | We report on a high-performance back-gated carbon nanotube field-effect transistor (CNFET) with a peak transconductance of 12.5 mu S and a delay time per unit length of tau/L = 19 ps/mu m. In order to minimize the parasitic capacitances and optimize the performance of scaled CNFETs, we have utilized a dual-gate design and have fabricated a 40-nm-gate CNFET possessing excellent subthreshold and output characteristics without exhibiting short-channel effects. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34924]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Y. M. Lin,J. Appenzeller,Z. H. Chen,et al. High-performance dual-gate carbon nanotube FETs with 40-nm gate length[J]. Ieee Electron Device Letters,2005,26(11):823-825. |
| APA | Y. M. Lin,J. Appenzeller,Z. H. Chen,Z. G. Chen,H. M. Cheng,&P. Avouris.(2005).High-performance dual-gate carbon nanotube FETs with 40-nm gate length.Ieee Electron Device Letters,26(11),823-825. |
| MLA | Y. M. Lin,et al."High-performance dual-gate carbon nanotube FETs with 40-nm gate length".Ieee Electron Device Letters 26.11(2005):823-825. |
入库方式： OAI收割
来源：金属研究所
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