中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Electrical properties of undoped PZT and Co-doped PCZT films deposited on ITO/glass substrates by a sol-gel method

文献类型:期刊论文

作者Z. L. Liu ; Q. Liu ; H. R. Liu ; K. L. Yao
刊名Physica Status Solidi a-Applications and Materials Science
出版日期2005
卷号202期号:9页码:1834-1841
关键词titanate thin-films ferroelectric properties dielectric-properties bi4ti3o12 ceramics microstructures
ISSN号0031-8965
中文摘要Pb(Zr0.5Ti0.5)O-3 (PZT) and Co-doped Pb(Zr0.5Ti0.5)O-3 (PCZT) thin films have been fabricated on ITO/glass substrates by a sol-gel method combined with a rapid thermal annealing process. The films were poly-crystalline with (101)-preferred orientation. The experiments found that the addition of cobalt in PZT films greatly improved the ferroelectric properties of PZT thin films. Large remanent polarization and small coercive field were confirmed by P-E hysteresis loop measurements. The values for PZT films and PCZT films with 10 mol% Co-doped annealed at 600 degrees C were 36.5 mu C/cm(2) and 45.2 kV/cm, 58.6 mu C/cm(2) and 67.3 kV/cm, respectively. Also, dielectric properties and I-V properties of PCZT films were revealed to be sensitive to the content of cobalt. The loss factor was higher for PCZT than for PZT films. The same behavior was obtained for the leakage current density.
原文出处://WOS:000230889500024
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/34959]  
专题金属研究所_中国科学院金属研究所
推荐引用方式
GB/T 7714
Z. L. Liu,Q. Liu,H. R. Liu,et al. Electrical properties of undoped PZT and Co-doped PCZT films deposited on ITO/glass substrates by a sol-gel method[J]. Physica Status Solidi a-Applications and Materials Science,2005,202(9):1834-1841.
APA Z. L. Liu,Q. Liu,H. R. Liu,&K. L. Yao.(2005).Electrical properties of undoped PZT and Co-doped PCZT films deposited on ITO/glass substrates by a sol-gel method.Physica Status Solidi a-Applications and Materials Science,202(9),1834-1841.
MLA Z. L. Liu,et al."Electrical properties of undoped PZT and Co-doped PCZT films deposited on ITO/glass substrates by a sol-gel method".Physica Status Solidi a-Applications and Materials Science 202.9(2005):1834-1841.

入库方式: OAI收割

来源:金属研究所

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