High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p-n junctions
文献类型：期刊论文
| 作者 | H. B. Lu ; S. Y. Dai ; Z. H. Chen ; Y. L. Zhou ; B. L. Cheng ; K. J. Jin ; L. F. Liu ; G. Z. Yang ; X. L. Ma |
| 刊名 | Applied Physics Letters
 |
| 出版日期 | 2005 |
| 卷号 | 86期号:3 |
| 关键词 | molecular-beam epitaxy colossal magnetoresistance trilayer junctions tunnel-junctions heterostructure temperature manganites electron srtio3 |
| ISSN号 | 0003-6951 |
| 中文摘要 | Large positive magnetoresistance (MR) and high MR sensitivity in low magnetic fields have been discovered in the Sr-doped LaMnO3 and Nb-doped SrTiO3 p-n junctions fabricated by laser molecular-beam epitaxy. The MR ratios, defined as DeltaR/R-0, DeltaR = R-H-R-0, are observed as large as 11 % in 5 Oe, 23 % in 100 Oe, and 26 % in 1000 Oe at 290 K; 53% in 5 Oe, 80 % in 100 Oe, and 94 % in 1000 Oe at 255 K. The MR sensitivities are 85 Omega/Oe at 290 K, 246 Omega/Oe at 255 K, and 136 Omega/Oe at 190 K, respectively, with the applied magnetic field changed from 0 to 5 Oe. The positive MR ratios and high MR sensitivities of the p-n junctions are very different from that of the LaMnO3 compound family. (C) 2005 American Institute of Physics. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/34960]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | H. B. Lu,S. Y. Dai,Z. H. Chen,et al. High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p-n junctions[J]. Applied Physics Letters,2005,86(3). |
| APA | H. B. Lu.,S. Y. Dai.,Z. H. Chen.,Y. L. Zhou.,B. L. Cheng.,...&X. L. Ma.(2005).High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p-n junctions.Applied Physics Letters,86(3). |
| MLA | H. B. Lu,et al."High sensitivity of positive magnetoresistance in low magnetic field in perovskite oxide p-n junctions".Applied Physics Letters 86.3(2005). |
入库方式： OAI收割
来源：金属研究所
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