中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
The kinetic limit of superheating induced by semicoherent interfaces

文献类型:期刊论文

作者Q. S. Mei ; Z. H. Jin ; K. Lu
刊名Philosophical Magazine Letters
出版日期2005
卷号85期号:4页码:203-211
关键词al matrix nucleation catastrophe melting temperature stability limit particles dislocations crystals metals
ISSN号0950-0839
中文摘要The superheating behaviour of embedded particles induced by semicoherent interfaces has been observed in many circumstances. In this paper, a phenomenological model for melt nucleation on misfit dislocations at a semicoherent interface is proposed. A kinetic limit for semicoherent-interface-induced superheating, which is in good agreement with the results of experiments and computer simulations, is derived from this model. Calculations and analyses based on the model reveal that melting prefers to initiate at the semicoherent interface and that superheating of embedded particles is possible for a melt nucleation contact angle less than 90 degrees. Among the matrix-dependent parameters, the contact angle and the shear modulus of the matrix are found to be dominant in determining the superheating of embedded particles.
原文出处://WOS:000230132300005
公开日期2012-04-14
源URL[http://ir.imr.ac.cn/handle/321006/34981]  
专题金属研究所_中国科学院金属研究所
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Q. S. Mei,Z. H. Jin,K. Lu. The kinetic limit of superheating induced by semicoherent interfaces[J]. Philosophical Magazine Letters,2005,85(4):203-211.
APA Q. S. Mei,Z. H. Jin,&K. Lu.(2005).The kinetic limit of superheating induced by semicoherent interfaces.Philosophical Magazine Letters,85(4),203-211.
MLA Q. S. Mei,et al."The kinetic limit of superheating induced by semicoherent interfaces".Philosophical Magazine Letters 85.4(2005):203-211.

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来源:金属研究所

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