Molecular dynamics studies on vacancy-interstitial annihilation in silicon
文献类型：期刊论文
| 作者 | Y. H. Qiao ; S. Q. Wang |
| 刊名 | Acta Physica Sinica
 |
| 出版日期 | 2005 |
| 卷号 | 54期号:10页码:4827-4835 |
| 关键词 | molecular dynamics vacancy and interstitial diffusion point-defects diffusion mechanisms |
| ISSN号 | 1000-3290 |
| 中文摘要 | Molecular dynamics (MD) simulation is performed to study the vacancy-interstitial annihilation in crystalline silicon. We choose the Stillinger-Weber potential, which is commonly used for silicon, to describe the interaction between atoms. The system is relaxed under 300K and 1400K respectively. We have found that < 111 > is the preferred recombination direction and propose the presence of an energy barrier in the < 110 > direction. From the calculated value of energy barrier along < 110 > we give a reasonable explanation for the difference between Tang's and Zawadzki's data. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35006]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Y. H. Qiao,S. Q. Wang. Molecular dynamics studies on vacancy-interstitial annihilation in silicon[J]. Acta Physica Sinica,2005,54(10):4827-4835. |
| APA | Y. H. Qiao,&S. Q. Wang.(2005).Molecular dynamics studies on vacancy-interstitial annihilation in silicon.Acta Physica Sinica,54(10),4827-4835. |
| MLA | Y. H. Qiao,et al."Molecular dynamics studies on vacancy-interstitial annihilation in silicon".Acta Physica Sinica 54.10(2005):4827-4835. |
入库方式： OAI收割
来源：金属研究所
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