Interfacial microstructure of high-kappa dielectric CaZrOx films deposited by pulse laser deposition in low oxygen pressure
文献类型：期刊论文
| 作者 | X. Y. Qiu ; H. W. Liu ; F. Fang ; M. J. Ha ; J. M. Liu |
| 刊名 | Integrated Ferroelectrics
 |
| 出版日期 | 2005 |
| 卷号 | 74页码:103-111 |
| 关键词 | calcium zirconate interfacial kinetic process microstructure thermal-stability gate dielectrics zro2 films thin-films silicon si diffusion si(100) growth oxides |
| ISSN号 | 1058-4587 |
| 中文摘要 | The interfacial microstructure of CaZrO x films deposited on Si(100) substrate by pulse laser deposition in oxygen-deficient ambient was investigated by high-resolution transmission electron microscopy (HRTEM) and X-ray photon spectroscopy (XPS). The CaZrO x films deposited at 600 degrees C reacted with Si to form a CaZrO x -silicate interfacial layer with kappa greater than or similar to 5.25. Above 700 degrees C, CaZrO x began to separate into ZrO 2 and CaO-rich zirconate. The separated ZrO 2 was crystallized at the surface layer of films, while at the interfacial layer the separated ZrO 2 reacted with Si to form Zr-silicide and Zr-silicate phase, and the volume proportion of Zr-silicide may be higher than Zr-silicate above 700 degrees C. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35008]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | X. Y. Qiu,H. W. Liu,F. Fang,et al. Interfacial microstructure of high-kappa dielectric CaZrOx films deposited by pulse laser deposition in low oxygen pressure[J]. Integrated Ferroelectrics,2005,74:103-111. |
| APA | X. Y. Qiu,H. W. Liu,F. Fang,M. J. Ha,&J. M. Liu.(2005).Interfacial microstructure of high-kappa dielectric CaZrOx films deposited by pulse laser deposition in low oxygen pressure.Integrated Ferroelectrics,74,103-111. |
| MLA | X. Y. Qiu,et al."Interfacial microstructure of high-kappa dielectric CaZrOx films deposited by pulse laser deposition in low oxygen pressure".Integrated Ferroelectrics 74(2005):103-111. |
入库方式： OAI收割
来源：金属研究所
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