Thermal stability and dielectric properties of ultrathin CaZrOx films prepared by pulsed laser deposition
文献类型：期刊论文
| 作者 | X. Y. Qiu ; H. W. Liu ; F. Fang ; M. J. Ha ; X. H. Zhou ; J. M. Liu |
| 刊名 | Applied Physics a-Materials Science & Processing
 |
| 出版日期 | 2005 |
| 卷号 | 81期号:7页码:1431-1434 |
| 关键词 | zro2 films silicon |
| ISSN号 | 0947-8396 |
| 中文摘要 | The thermal stability and dielectric properties of amorphous CaZrOx film prepared by pulsed laser deposition (PLD) have been investigated. X-ray diffraction (XRD) investigation shows that CaZrOx film still remains amorphous after rapid thermal annealing at 700 degrees C for 10 min. Differential thermal analysis (DTA) indicates that the crystallization temperature of CaZrOx film is about 729.53 degrees C, which is significantly higher than that of amorphous ZrO2 films prepared at the similar conditions. High-resolution transmission electron microscopy (HRTEM) and X-ray photon spectroscopy (XPS) analysis reveal there exists a Si-O transition layer between the CaZrOx film and Si substrate. The permittivity of CaZrOx film is about 10.5 ( at 1MHz) by measuring a Pt/CaZrOx/Pt MIM structure. Under the optimized conditions, a small EOT = 0.91 nm and a leakage current density of 125mA/cm(2) at 1 V gate voltage were obtained. The enhanced thermal stability and improved electrical characteristics suggest that the amorphous CaZrOx film may be an attractive gate dielectric alternative for next generation MOS field effect transistor applications. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35009]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | X. Y. Qiu,H. W. Liu,F. Fang,et al. Thermal stability and dielectric properties of ultrathin CaZrOx films prepared by pulsed laser deposition[J]. Applied Physics a-Materials Science & Processing,2005,81(7):1431-1434. |
| APA | X. Y. Qiu,H. W. Liu,F. Fang,M. J. Ha,X. H. Zhou,&J. M. Liu.(2005).Thermal stability and dielectric properties of ultrathin CaZrOx films prepared by pulsed laser deposition.Applied Physics a-Materials Science & Processing,81(7),1431-1434. |
| MLA | X. Y. Qiu,et al."Thermal stability and dielectric properties of ultrathin CaZrOx films prepared by pulsed laser deposition".Applied Physics a-Materials Science & Processing 81.7(2005):1431-1434. |
入库方式： OAI收割
来源：金属研究所
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