Helium-charged La-Ni-Al thin films deposited by magnetron sputtering
文献类型：期刊论文
| 作者 | L. Q. Shi ; D. M. Chen ; S. L. Xu ; C. Z. Liu ; W. L. Hao ; Z. Y. Zhou |
| 刊名 | Fusion Science and Technology
 |
| 出版日期 | 2005 |
| 卷号 | 48期号:1页码:534-538 |
| 关键词 | lani4.25al0.75 behavior tritides |
| ISSN号 | 1536-1055 |
| 中文摘要 | An advanced implantation of low energy helium-4 atoms during the La-Ni-Al film growth by adopting magnetron sputtering with Ar/He mixture gases is discussed Both proton backscattering spectroscopy (PBS) and elastic recoil detection (ERD) analyses were adopted to measure helium concentration of the films and distribution in the near-surface region. Helium atoms with a high concentration incorporate evenly in deposited film. The introduction of the helium with no extra irradiation damage is expected by choosing suitable deposition conditions. It was found that amorphous and crystalline LaNi5 -type structures can be achieved when sputtered with pure Ar and Ar/He mixture gases at room temperature, respectively. Thermal desorption experiments proposes that a part of hydrogen atoms are bound to trapped helium at crystal and releases together with helium. Only a small fraction of helium is released from the helium-vacancy clusters in lower temperature range and most of helium is released from small size helium bubbles in the high temperature range. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35029]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | L. Q. Shi,D. M. Chen,S. L. Xu,et al. Helium-charged La-Ni-Al thin films deposited by magnetron sputtering[J]. Fusion Science and Technology,2005,48(1):534-538. |
| APA | L. Q. Shi,D. M. Chen,S. L. Xu,C. Z. Liu,W. L. Hao,&Z. Y. Zhou.(2005).Helium-charged La-Ni-Al thin films deposited by magnetron sputtering.Fusion Science and Technology,48(1),534-538. |
| MLA | L. Q. Shi,et al."Helium-charged La-Ni-Al thin films deposited by magnetron sputtering".Fusion Science and Technology 48.1(2005):534-538. |
入库方式： OAI收割
来源：金属研究所
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