X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering
文献类型：期刊论文
| 作者 | R. Xiong ; J. Shi |
| 刊名 | Journal of Materials Science & Technology
 |
| 出版日期 | 2005 |
| 卷号 | 21期号:4页码:541-544 |
| 关键词 | TixAl1-xN films X-ray photoelectron spectroscopy core-electron spectrum aluminum nitride films ion plating method vapor-deposition coatings microstructure growth tools ain ti |
| ISSN号 | 1005-0302 |
| 中文摘要 | TixAl1-xN films have been prepared by RF reactive magnetron sputtering. X-ray diffraction results showed that TixAl1-xN thin films in this study were hexagonal wurtzite structure with the Ti content up to 0.18. X-ray photoelectron spectrocopy studies provided that the N1s core-electron spectrum of TixAl1-xN thin film brodend with increasing Ti content, and the difference of the chemical shifts for Ti2p(3/2) line between TiN and TixAl1-xN thin film was 0.7 eV. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35155]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | R. Xiong,J. Shi. X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering[J]. Journal of Materials Science & Technology,2005,21(4):541-544. |
| APA | R. Xiong,&J. Shi.(2005).X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering.Journal of Materials Science & Technology,21(4),541-544. |
| MLA | R. Xiong,et al."X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering".Journal of Materials Science & Technology 21.4(2005):541-544. |
入库方式： OAI收割
来源：金属研究所
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