Interfacial segregation of Bi during current stressing of Sn-Bi/Cu solder interconnect
文献类型：期刊论文
| 作者 | Q. L. Yang ; J. K. Shang |
| 刊名 | Journal of Electronic Materials
 |
| 出版日期 | 2005 |
| 卷号 | 34期号:11页码:1363-1367 |
| 关键词 | electromigration solder interconnect interface eutectic snpb electromigration |
| ISSN号 | 0361-5235 |
| 中文摘要 | Effect of electromigration on the interfacial structure of solder interconnects was examined in a Sn-Bi/Cu interconnect system. At current densities above 10(4) A/cm(2), Bi migrated along the direction of the electron flow in the solder alloy. A continuous Bi layer was found at the solder interface on the anode side, while a Sn-rich region formed at the cathode side of the electrical connection. The presence of the Bi layer inhibited further growth of Cu-Sn intermetallic phase at the interface by acting as a diffusion barrier to the reacting species. |
| 原文出处 | |
| 公开日期 | 2012-04-14 |
| 源URL | [http://ir.imr.ac.cn/handle/321006/35170]  |
| 专题 | 金属研究所_中国科学院金属研究所 |
| 推荐引用方式 GB/T 7714 | Q. L. Yang,J. K. Shang. Interfacial segregation of Bi during current stressing of Sn-Bi/Cu solder interconnect[J]. Journal of Electronic Materials,2005,34(11):1363-1367. |
| APA | Q. L. Yang,&J. K. Shang.(2005).Interfacial segregation of Bi during current stressing of Sn-Bi/Cu solder interconnect.Journal of Electronic Materials,34(11),1363-1367. |
| MLA | Q. L. Yang,et al."Interfacial segregation of Bi during current stressing of Sn-Bi/Cu solder interconnect".Journal of Electronic Materials 34.11(2005):1363-1367. |
入库方式： OAI收割
来源：金属研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。